PART |
Description |
Maker |
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CY27H010-30ZC CY27H010-35JC CY27H010-35WMB CY27H01 |
128K x 8 High-Speed CMOS EPROM 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PQCC32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PDSO32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PDIP32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PQCC32 From old datasheet system
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Cypress Semiconductor, Corp. Atmel, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
AS7C1025B AS7C1025B-20TJIN AS7C1025B-10JC AS7C1025 |
128 x 64 pixel format, LED or EL Backlight available 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32 5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125 High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
LY61L1024RL-18LL LY61L1024RL-18LLI LY61L1024RL-18L |
128K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
LP61L1024S-12 LP61L1024X-12 LP61L1024V-12 LP61L102 |
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的8.3V的高速低虚拟通道连接CMOS SRAM 128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的83.3V的高速低虚拟通道连接CMOS SRAM
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
K6R1016V1D |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
|
Samsung Electronic
|
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
CXK5T81000ATM/AYM/AM-12LLX CXK5T81000ATM/AYM/AM-10 |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 128K X 8 STANDARD SRAM, 100 ns, PDSO32 131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
IS62C1024 IS62C1024-35Q IS62C1024-35QI IS62C1024-4 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 45 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
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